STP572

    Semiconductor Measurement Technology: Spreading Resistance Symposium

    Ehrstein James
    Published: 1974


      Format Pages Price  
    PDF (6.3M) $86   ADD TO CART
    Hardcopy (shipping and handling) $86   ADD TO CART
    Hardcopy + PDF Bundle - Save 25%
    (shipping and handling)
    $129.00   ADD TO CART



    Table of Contents

    Discussion Session

    Concluding Remarks

    Welcoming Remarks at the ASTM/NBS Symposium on Spreading Resistance Measurements Gaithersburg, Maryland June 13, 1974

    Welcoming Remarks from ASTM

    Keynote Address Symposium on Spreading Resistance Gaithersburg, Maryland June 13–14, 1974

    The Physics of Spreading Resistance Measurements

    Formal Comparison of Correction Formulae for Spreading Resistance Measurements on Layered Structures

    Two-Point Probe Correction Factors

    On the Validity of Correction Factors applied to Spreading Resistance Measurements on Bevelled Structures

    SRPROF, A Fast and Simple Program for Analyzing Spreading Resistance Profile Data

    Multilayer Analysis of Spreading Resistance Measurements

    An Automated Spreading Resistance Test Facility

    Angle-Bevelling Silicon Epitaxial Layers, Technique and Evaluation

    Spreading Resistance Measurements on Silicon with Non-blocking Aluminum-Silicon Contacts

    The Preparation of Bevelled Surfaces for Spreading Resistance Probing by Diamond Grinding and Laser Measurement of Bevel Angles

    Spreading Resistance Correction Factors for (111) and (100) Surfaces

    On the Calibration and Performance of a Spreading Resistance Probe

    Comparison of the Spreading Resistance Probe with other Silicon Characterization Techniques

    Preparation of a Lightly Loaded, Close-Spaced Spreading Resistance Probe and its Application to the Measurement of Doping Profiles in Silicon

    A Direct Comparison of Spreading Resistance and MOS-CV Measurements of Radial Resistivity Inhomogeneities on PICTUREPHONE® Wafers

    Investigations on Local Oxygen Distribution in Silicon Single Crystals by Means of Spreading Resistance Technique

    Use of the Spreading Resistance Probe for the Characterization of Microsegregation in Silicon Crystals

    Effects of Oxygen and Gold on Silicon Power Devices

    The Evaluation of Thin Silicon Layers by Spreading Resistance Measurements

    Evaluation of the Effective Epilayer Thickness by Spreading Resistance Measurement

    The Experimental Investigation of Two-Point Spreading Resistance Correction Factors for Diffused Layers

    Application of the Spreading Resistance Technique to Silicon Characterization for Process and Device Modeling

    Improved Surface Preparation For Spreading Resistance Measurements on p-type Silicon

    Appendix-Bibliography


    Committee: F01

    DOI: 10.1520/STP572-EB

    ISBN-EB: 978-0-8031-6938-8

    ISBN-13: 978-0-8031-6661-5

    ASTM International is a member of CrossRef.

    0-8031-6661-3
    978-0-8031-6661-5
    STP572-EB