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SEDL / STP / STP572-EB
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STP572
Semiconductor Measurement Technology: Spreading Resistance Symposium
Ehrstein James
Pages: 288
Published: 1974
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Table of Contents
Discussion Session
Concluding Remarks
Langer P.
Welcoming Remarks at the ASTM/NBS Symposium on Spreading Resistance Measurements Gaithersburg, Maryland June 13, 1974
French J.
Welcoming Remarks from ASTM
Scace R.
Keynote Address Symposium on Spreading Resistance Gaithersburg, Maryland June 13–14, 1974
Mazur R.
The Physics of Spreading Resistance Measurements
Fonash S.
Formal Comparison of Correction Formulae for Spreading Resistance Measurements on Layered Structures
Severin P.
Two-Point Probe Correction Factors
Dickey D.
On the Validity of Correction Factors applied to Spreading Resistance Measurements on Bevelled Structures
Pinchon P.
SRPROF, A Fast and Simple Program for Analyzing Spreading Resistance Profile Data
Langer P., Morris B., White J.
Multilayer Analysis of Spreading Resistance Measurements
Lee G.
An Automated Spreading Resistance Test Facility
White J.
Angle-Bevelling Silicon Epitaxial Layers, Technique and Evaluation
Severin P.
Spreading Resistance Measurements on Silicon with Non-blocking Aluminum-Silicon Contacts
Krausse J.
The Preparation of Bevelled Surfaces for Spreading Resistance Probing by Diamond Grinding and Laser Measurement of Bevel Angles
Mayer A., Shwartzman S.
Spreading Resistance Correction Factors for (111) and (100) Surfaces
Murrmann H., Sedlak F.
On the Calibration and Performance of a Spreading Resistance Probe
Ruiz H., Voltmer F.
Comparison of the Spreading Resistance Probe with other Silicon Characterization Techniques
Lee G., Schroen W., Voltmer F.
Preparation of a Lightly Loaded, Close-Spaced Spreading Resistance Probe and its Application to the Measurement of Doping Profiles in Silicon
Deines J., Gorey E., Michel A., Poponiak M.
A Direct Comparison of Spreading Resistance and MOS-CV Measurements of Radial Resistivity Inhomogeneities on PICTUREPHONE® Wafers
Edwards J., Nigh H.
Investigations on Local Oxygen Distribution in Silicon Single Crystals by Means of Spreading Resistance Technique
Vieweg-Gutberlet F.
Use of the Spreading Resistance Probe for the Characterization of Microsegregation in Silicon Crystals
Ruiz H., Voltmer F.
Effects of Oxygen and Gold on Silicon Power Devices
Assour J.
The Evaluation of Thin Silicon Layers by Spreading Resistance Measurements
Gruber G., Pfeifer R.
Evaluation of the Effective Epilayer Thickness by Spreading Resistance Measurement
Murrmann H., Sedlak F.
The Experimental Investigation of Two-Point Spreading Resistance Correction Factors for Diffused Layers
D'Aiello R., Goldsmith N., Sunshine R.
Application of the Spreading Resistance Technique to Silicon Characterization for Process and Device Modeling
Schroen W.
Improved Surface Preparation For Spreading Resistance Measurements on p-type Silicon
Ehrstein J.
Appendix-Bibliography
Committee: F01
Paper ID: STP572-EB
DOI: 10.1520/STP572-EB
ISBN-EB: 978-0-8031-6938-8
 ASTM International is a member of CrossRef.
0-8031-6661-3
978-0-8031-6661-5
STP572-EB
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