SYMPOSIA PAPER Published: 01 January 1974

Comparison of the Spreading Resistance Probe with other Silicon Characterization Techniques


Range and precision of doping concentration data in silicon materials gained by the spreading resistance technique are compared to values obtained by other characterization methods. They include junction and MOS capacitance-voltage techniques, mercury probe, four-point probe, incremental sheet resistance technique, ion microprobe, and optical methods. The comparison considers precision and resolution of each technique, range of silicon resistivities and layer thicknesses, experimental effort, analytical interpretation, and time and cost of data acquistion and evaluation. Examples are presented which demonstrate the range of applicability of each technique and how they can supplement each other so that they cover the total doping range of silicon devices.

Author Information

Schroen, Walter, H.
Lee, Gregg, A.
Voltmer, Fred, W.
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Developed by Committee: F01
Pages: 155–168
DOI: 10.1520/STP47403S
ISBN-EB: 978-0-8031-6938-8
ISBN-13: 978-0-8031-6661-5