SYMPOSIA PAPER Published: 01 January 1987

Low Temperature and Low Pressure Silicon Epitaxy by Plasma-Enhanced CVD


This paper reviews the most recent results obtained using a very low pressure, plasma enhanced chemical vapor deposition technique for low temperature (650–800°C) silicon epitaxy. Initial results on autodoping studies and on p-n junctions and MOS transistors fabricated in these films are briefly discussed.

Author Information

Reif, R
Price: $25.00
Contact Sales
Reprints and Permissions
Reprints and copyright permissions can be requested through the
Copyright Clearance Center
Developed by Committee: F01
Pages: 21–23
DOI: 10.1520/STP25737S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4