STP Published: 1987

Emerging Semiconductor Technology

Fourth in a series, STP 960 addresses new problems in semiconductor processing for the mid ‘80s. A total of 50 papers cover; Epitaxial Technology; Dielectrics and Junction Formation Techniques; Material Defects, Oxygen and Carbon in Silicon; Yield Enhancement and Contamination Control Aspects; Dopant Profiling Techniques and In-Process Measurements; and Fab Equipment: Automation and Reliability.

Table of Contents

DC Gupta

JE Springgate

RI Scace

R Reif

H-R Chang, JS Rosczak

SM Fisher, ML Hammond, NP Sandler

C-C Daniel Wong, JO Borland, S Hahn

RB Swaroop

JW Medernach, VA Wells

V Ramamurthy

E Lora-Tamayo, J Du Port de Pontcharra, M Bruel

LA Larson, BJ Kirby

S Middleman

S Roberts, JG Ryan, DW Martin

H-S Lee

SJ Fonash, A Rohatgi

SV Nguyen, JR Abernathey, SA Fridmann, ML Gibson

EJ Bawolek

T Abraham, R Theriault

KC Vanner, JR Cockrill, JA Turner

M Kunst, A Werner, G Beck, U Kuppers, H Tributsch

SC Lee, BL Chin

V Starov

RN Singh

HM Liaw, JW Rose, HT Nguyen

LD Dyer

T Shiraiwa, S Inenaga

MC Arst

H Suga, K Murai

WK Gladden, A Baghdadi

N Inoue, T Arai, T Nozaki, K Endo, K Mizuma

S Kar, M Tewari

EC Maass

CH Beck

MD Brain

ND Casper, BW Soren

JM Davidson, TP Ruane

JR Ehrstein

J Albers

M Pawlik

GG Sweeney, TR Alvarez

J Albers

M Pawlik, RD Groves, RA Kubiak, WY Leong, EHC Parker

GW Banke, K Varahramyan, GJ Slusser

RG Mazur

WA Keenan, WH Johnson, AK Smith

T Shiraiwa, T Ochiai, M Sano, Y Tada, T Arai

JF Black, JM Berak, GG Peterson

CA Fiorletta, R Lennard, JG Harper

MS Ligeti

JC Greiner

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Developed by Committee: F01
Pages: 725
DOI: 10.1520/STP960-EB
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4