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Results of ellipsometric measurements are presented for arsenic implants in silicon at doses from 2 × 1013 to 8 × 1015 cm−2 and energies from 30 to 180 keV. For implanters which mechanically scan wafers through the ion beam, it is possible to construct curves relating ellipsometric parameters to implant parameters. Reproducible ellipsometric results are strongly dependent on wafer preparation and precise setting and control of implant energies. Spectral reflectance measurements of implanted samples show that this method may be also used for implant monitoring.
silicon wafer, ion implantation, dose measurements, ellipsometric measurements, spectral reflectance, arsenic implants in silicon
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