Published: Jan 1983
| ||Format||Pages||Price|| |
|PDF (116K)||10||$25||  ADD TO CART|
|Complete Source PDF (9.3M)||555||$66||  ADD TO CART|
The effect of multiple reflections when analyzing the infrared spectra for oxygen measurements in silicon wafers is important. It may cause errors up to 20% when ignored. The procedure and calculations to derive oxygen concentration from the spectra by taking into account this effect is described in detail. The effect of back-surface finish on the measurements is also discussed.
Oxygen concentration in silicon, silicon wafers, multiple reflection, infrared spectra, absorption coefficient, back-surface finish
Wacker Siltronic Corporation, Portland, Ore.