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    STP804

    Analysis of Infrared Spectra for Oxygen Measurements in Silicon

    Published: 01 January 1983


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    Abstract

    The effect of multiple reflections when analyzing the infrared spectra for oxygen measurements in silicon wafers is important. It may cause errors up to 20% when ignored. The procedure and calculations to derive oxygen concentration from the spectra by taking into account this effect is described in detail. The effect of back-surface finish on the measurements is also discussed.

    Keywords:

    Oxygen concentration in silicon, silicon wafers, multiple reflection, infrared spectra, absorption coefficient, back-surface finish


    Author Information:

    Graupner, RK
    Wacker Siltronic Corporation, Portland, Ore.


    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36184S