SYMPOSIA PAPER Published: 01 January 1980
STP35129S

Study of Minority Carrier Lifetime Behavior in Czochralski-Grown Silicon Crystals

Source

By using the surface photovoltage technique to measure minority carrier lifetime, it was found that grown-in defects of swirl in Czochralski-grown silicon crystals appear to be oxygen related and create recombination centers that degrade the lifetime more in the swirled areas. In addition, the degradation was also observed to be very sensitive to the previous thermal history of the starting material and to subsequent thermal treatments.

Author Information

Wong, DC
Arco Solar, Chatsworth, Calif.
Wakefield, GF
Materials Division, Chatsworth, Calif.
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Details
Developed by Committee: F01
Pages: 86–92
DOI: 10.1520/STP35129S
ISBN-EB: 978-0-8031-4780-5
ISBN-13: 978-0-8031-0390-0