STP712

    Study of Minority Carrier Lifetime Behavior in Czochralski-Grown Silicon Crystals

    Published: Jan 1980


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    Abstract

    By using the surface photovoltage technique to measure minority carrier lifetime, it was found that grown-in defects of swirl in Czochralski-grown silicon crystals appear to be oxygen related and create recombination centers that degrade the lifetime more in the swirled areas. In addition, the degradation was also observed to be very sensitive to the previous thermal history of the starting material and to subsequent thermal treatments.

    Keywords:

    minority carrier lifetime, swirl defects, silicon


    Author Information:

    Wong, DC
    Manager of Advanced Crystal Growth, Arco Solar, Chatsworth, Calif.

    Wakefield, GF
    Director, Materials Division, Chatsworth, Calif.


    Paper ID: STP35129S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP35129S


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