STP990

    Chemical Analysis of Metallic Impurity on the Surface of Silicon Wafers

    Published: Jan 1989


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    Abstract

    In silicon wafer processing, it is important to decrease the impurity on the wafer after final process. The authors report a method of analysis of impurity only on the top surface of Si wafers. In this study, wafer are contaminated with a cleaning solution containing impurity, and the impurity remains on the wafer is collected into the resulting liquid of the oxide and HF vapor. They are then analysed by atomic absorption spectrophotometer. Detection limits are Na: 5×108atoms/cm2, Fe: 2×109atoms/cm2, Al: 1×1010atoms/cm2.

    Keywords:

    silicon wafer, surface analysis, impurity on surface, atomic absorption spectrophotometry, contamination in native oxide


    Author Information:

    Shiraiwa, T
    executive technical consultantdeputy directormanager of material evaluation sectionresearch chemist, Osaka Titanium Co., LtdSemiconductor Res. Lab.Semiconductor Res. Lab. at Kyushu Electronic Metal Co., Ltd, Amagasaki HyogoKohokucho, Saga,

    Fujino, N
    executive technical consultantdeputy directormanager of material evaluation sectionresearch chemist, Osaka Titanium Co., LtdSemiconductor Res. Lab.Semiconductor Res. Lab. at Kyushu Electronic Metal Co., Ltd, Amagasaki HyogoKohokucho, Saga,

    Sumita, S
    executive technical consultantdeputy directormanager of material evaluation sectionresearch chemist, Osaka Titanium Co., LtdSemiconductor Res. Lab.Semiconductor Res. Lab. at Kyushu Electronic Metal Co., Ltd, Amagasaki HyogoKohokucho, Saga,

    Tanizoe, Y
    executive technical consultantdeputy directormanager of material evaluation sectionresearch chemist, Osaka Titanium Co., LtdSemiconductor Res. Lab.Semiconductor Res. Lab. at Kyushu Electronic Metal Co., Ltd, Amagasaki HyogoKohokucho, Saga,


    Paper ID: STP26048S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26048S


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