STP Published: 1989
STP990-EB

Semiconductor Fabrication: Technology and Metrology

Editor(s): D C Gupta

STP 990 presents 35 papers on: Silicon Crystal Growth and Epitaxial Deposition Techniques; Fabrication Technology; Micro contamination; Metallization and Interconnects; Material Defects and Gettering; and Control Charts, Standards, and Specifications.

Table of Contents

DC Gupta

K Yamashita, S Kobayashi, T Aoki, Y Kawata, T Shiraiwa

LD Dyer

MD Robinson, LH Lawrence

H Suga, M Ichizawa, K Endo, K Tomizawa

W Wijaranakula, JH Matlock, H Mollenkopf

HL Berkowitz

DJ Ruprecht, LG Hellwig, JA Rossi

RG Mazur, RJ Hillard

CL Ygartua, R Swaroop

R Subrahmanyan, HZ Massoud, RB Fair

V Starov, L Lane

JK Bhardwaj, A Kiermasz, MA Stephens, SJ Harrington, AD McQuarrie

JM Heddleson, MW Horn, SJ Fonash

LD Clements, JE Busse, J Mehta

C-H Chen, S DeOrnellas, B Burke

TR Lettieri

SH Goldsmith, GP Grundelman

A Lieberman

FM Dumesnil, M Bruner, M Berman

T Iwamori, Y Sakata, H Kojima, Y Yatsuda

HG Parks, CE Logan, CA Fahrenz

Y Kuo

P Eichinger, HJ Rath, H Schwenke

T Shiraiwa, N Fujino, S Sumita, Y Tanizoe

VK Khanna, DK Thakur, KL Jasuja, WS Khokle

PK Sinha, WS Glaunsinger

M Goldstein, J Makovsky

GA Rozgonyi, RR Kola, KE Bean, K Lindberg

W Wijaranakula, S Shimada, H Mollenkopf, JH Matlock, M Stuber

A Derheimer, S Takamizawa, JH Matlock, H Mollenkopf

G Borionetti, M Domenici, G Ferrero

DJ Friedman

GA Keller, WG Waldo, RF Babasick

RK Lowry

GC Tassey, RI Scace, JC French

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Details
Developed by Committee: F01
Pages: 470
DOI: 10.1520/STP990-EB
ISBN-EB: 978-0-8031-5107-9
ISBN-13: 978-0-8031-1273-5