STP1382: Silicon Substrate Related Gate Oxide Integrity at Different Oxide Thicknesses

    Grann, ED
    Wacker Siltronic Corp, Portland, OR

    Huber, A
    Wacker Siltronic AG, Burghausen,

    Grabmeier, J
    Wacker Siltronic AG, Burghausen,

    Hölzl, R
    Wacker Siltronic AG, Burghausen,

    Wahlich, R
    Wacker Siltronic AG, Burghausen,

    Pages: 10    Published: Jan 2000


    Abstract

    Gate oxide integrity (GOI) testing is a valuable tool for the characterization, development and optimization of tailor-made silicon (Si) substrates for the integrated circuits industry. Different Si substrates with various numbers of grown-in defects have been evaluated using charge-to-breakdown measurements. Yield and defect density analyses are studied for oxide thicknesses in the range from 40 nm down to 5 nm. The sensitivity and impact of grown-in defects, here predominantly crystal-originated particles (COPs), for different material groups on gate oxide reliability are shown in detail. In addition, results are presented on gate oxide degradation due to intentional metallic (Ni, Cu, Fe) contamination of various wafer types.

    Keywords:

    gate oxide integrity, silicon, crystal originated particles (COPs), metallic contamination, nickel (Ni), iron (Fe), copper (Cu), oxide thickness


    Paper ID: STP13488S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP13488S


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