Editor(s): Dinesh C. Gupta, George A. Brown
Thirteen papers provide the latest concepts and metrology of the Gate Dielectric Integrity (GDI) and its applications for the material and device process and tool qualification. The wide variety of topics covered includes: concepts, methods, protocols and reliability, and assessment as related to dielectric integrity. The characterization of thin dielectrics, various GDI measurements techniques, and discussion of important effects on the characterization of GDI is also included. Until now, such information has never been available in a single book on GDI.
This publication will benefit process engineers, fab technologists, quality and reliability engineers, silicon material scientists, materials characterization analysts, research scholars and device engineers.
G Bersuker, J Werking
GA Gruber, RJ Hillard
M Wilson, J Lagowski, A Savtchouk, L Jastrzebski, J D'Amico
MA Dexter, KM Hasslinger, JR Fritz, CA Ullo
ED Grann, A Huber, J Grabmeier, R Hölzl, R Wahlich
G Miner, G Xing, Y Yokota, A Jaggi, E Sanchez, C Chen, D Lopes
Y Murakami, T Yamazaki, W Itou, T Shingyouji