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The effects of sample boundaries on resistivity measurements made with a two-point spreading resistance probe are calculated for various boundary conditions. The results are presented in the form of dimensionless correction factors. The problem of depth-dependent resistivity in a thin layer is considered, and a method for correcting measurements on such layers is described.
Boundary correction, calculations, electrostatic analogue, resistivity, semiconductor, spreading resistance
Dickey, D. H.
Bell and Howell Research Laboratory, Pasadena, California