STP759

    Interactions of Intense 2.7 μm Picosecond Laser Pulses with Germanium

    Published: Oct 1981


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    Abstract

    Computer simulations of the generation and temporal evolution of hot plasmas in germanium during the passage of intense picosecond laser pulses have been begun. At 2.7μ two-photon absorption is the generating mechanism for carriers. Carrier heating from free-carrier absorption and energy transfer to the lattice through phonon-carrier collisions are described with an electron-hole band model similar to one previously used to describe plasma dynamics in germanium driven by one-photon absorption. Details of this model will be presented and the results available to date will be discussed.

    Keywords:

    IR laser damage, Photoexcited carriers, Semiconductor plasma


    Author Information:

    Bryant, GW
    Washington State University, Pullman, Washington,

    Schmid, A
    Washington State University, Pullman, Washington,

    Braunlich, P
    Washington State University, Pullman, Washington,

    Kelly, P
    Washington State University, Pullman, Washington,

    Ritchie, D
    Washington State University, Pullman, Washington,


    Paper ID: STP37035S

    Committee/Subcommittee: F01.02

    DOI: 10.1520/STP37035S


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