|
Interactions of Intense 2.7 μm Picosecond Laser Pulses with Germanium Pages: 5 Published: Oct 1981
Download this paper for $25
PDF (120K)
View License Agreement Source: STP759-EB Abstract Computer simulations of the generation and temporal evolution of hot plasmas in germanium during the passage of intense picosecond laser pulses have been begun. At 2.7μ two-photon absorption is the generating mechanism for carriers. Carrier heating from free-carrier absorption and energy transfer to the lattice through phonon-carrier collisions are described with an electron-hole band model similar to one previously used to describe plasma dynamics in germanium driven by one-photon absorption. Details of this model will be presented and the results available to date will be discussed. Keywords: IR laser damage, Photoexcited carriers, Semiconductor plasma Paper ID: STP37035S Committee/Subcommittee: F01.02 DOI: 10.1520/STP37035S ASTM International is a member of CrossRef. | ||