Work Item
ASTM WK59267

New Test Method for Use of 2N1486 Silicon Bipolar Junction Transistors as Neutron Spectrum Sensors and 1-MeV(Si) Fluence Monitors

1. Scope

To promote the advancement of nuclear science and technology and the safe application of energy by:
1) Standardizing measurement techniques and specifications for radiation effects and dosimetry including materials response, instrument response, and fuel burnup.
2) Standardizing the nomenclature and definitions used in or relating to testing methods or instruments in support of nuclear industry.
3) Maintaining a broad expertise in application of nuclear science and technology especially the measurement of radiation effects from environments of nuclear reactor, particle accelerators, indigenous space, spacecraft, and radionuclides.
4) Maintaining a broad expertise in the applications of radionuclides.
5) Sponsoring scientific and technical symposia and publications in the Committee's fields of specialization.
6) Performing liaison with related ASTM committees and other technical societies and organizations, both national and international.
Advising other technical committees of the Society in our field of expertise.


neutron dosimetry, displacement damage, neutron damage, radiation hardness, silicon transistors, spectrum sensors


This standard is needed to provide silicon displacement damage effects researchers an effective means of quantifying 1-MeV(Si) eqv. neutron fluence in circumstances where other means are not practical at an increased sensitivity to neutron fluence when compared with the existing standard test method: E1855-15 Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors.

The title and scope are in draft form and are under development within this ASTM Committee.


Developed by Subcommittee: E10.07

Committee: E10

Staff Manager: Stephen Mawn

Work Item Status

Date Initiated: 06-05-2017

Technical Contact: Andrew Tonigan

Item: 000