1. Scope

Keywords

Rationale

This standard is needed to provide silicon displacement damage effects researchers an effective means of quantifying 1-MeV(Si) eqv. neutron fluence in circumstances where other means are not practical at an increased sensitivity to neutron fluence when compared with the existing standard test method: E1855-15 Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors.