SYMPOSIA PAPER Published: 01 January 1965

Radiation Induced Surface Effects on Selected Semiconductor Devices


A preliminary investigation into the effects of space indigenous radiation on a number of semiconductor devices is described. A Co60 source was used to irradiate the devices to an ionization level equivalent to that received by a satellite in a typical orbit in a six-month period. Transistor ICBO and diode IR were monitored throughout the irradiation and pre-test and post-test transistor gain measurements were made. The results of the irradiation test are presented in graphical and tabular form. In general, transistor and diode reverse current increased and transistor gain decreased during irradiation. Some recovery was evidenced following storage and temperature annealing cycles.

Author Information

Cocca, U.
General Electric Co., Syracuse, N. Y.
Koepp-Baker, N., B.
Radiation Effects Operation, General Electric Co., Oklahoma City, Oklahoma
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Developed by Committee: E10
Pages: 149–171
DOI: 10.1520/STP44610S
ISBN-EB: 978-0-8031-6009-5
ISBN-13: 978-0-8031-6163-4