SYMPOSIA PAPER Published: 01 January 1963
STP44498S

Modular Dopant for Silicon Czochralski Crystals

Source

The value of a modular concept for doping Czochralski crystals is dependent upon the consistency of the dopant modules. The modules are small fractionalgram crystals of silicon containing only a known number of dopant atoms. Uniformity of module size and resistivity determines the consistency of the modules. With present techniques of growing and cutting small-diameter crystals and measuring resistivity, doping modules may be prepared which normally vary less than 3 per cent in total number of dopant atoms. For a group of three silicon crystals, the uniformity of dopant modules permitted the crystals to be doped to a target resistivity of 50 ohm-cm within 5 per cent.

Author Information

Smith, C.
Dow Corning Corp., Hemlock, Mich.
Currin, C.
Dow Corning Corp., Hemlock, Mich.
Price: $25.00
Contact Sales
Related
Reprints and Permissions
Reprints and copyright permissions can be requested through the
Copyright Clearance Center
Details
Developed by Committee: F01
Pages: 245–253
DOI: 10.1520/STP44498S
ISBN-EB: 978-0-8031-6211-2
ISBN-13: 978-0-8031-6139-9