SYMPOSIA PAPER Published: 01 January 1984
STP32657S

Evaluation of Gettering Efficiency of Backside Damage by the Use of the “Haze” Test

Source

“Haze” test has been used to evaluate gettering efficiency on the wafers damaged by different techniques.

The wafers have been partially back side damaged and then intention ally contaminated by “pure” contaminants, such as the most common 3d transition and noble metals.

In the particular case of contamination by iron we are calibrating our qualitative results by parallel measurements using neutron activation analysis: this is done utilizing thermal as well as epithermal and fast neutrons to transmute Fe-54 into *Mn-54.

Author Information

Domenici, M
Ferrero, G
Malinverni, P
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Details
Developed by Committee: F01
Pages: 257–271
DOI: 10.1520/STP32657S
ISBN-EB: 978-0-8031-4915-1
ISBN-13: 978-0-8031-0403-7