SYMPOSIA PAPER Published: 01 January 1984
STP32648S

Edge-Controlled, Self-Consistent Proximity Effect Corrections

Source

A new method for correcting electron-beam lithography pattern data for proximity effects is presented. The method calculates the average dose received by each partition exterior edge to be equal to the critical dose necessary for proper exposure. This method minimizes the number of partitioned rectangles required for acceptable lithography, thus greatly reducing CPU time. Electron-beam dose averages are not only determined for critical edges where exposure conditions are stringent, but also for the rest of the partitioned edges where tolerances are more relaxed. Both simulated and experimental results will be presented.

Author Information

Berkowitz, HL
Cook, CF
Kwiatkowski, JH
Goodreau, WM
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Details
Developed by Committee: F01
Pages: 124–142
DOI: 10.1520/STP32648S
ISBN-EB: 978-0-8031-4915-1
ISBN-13: 978-0-8031-0403-7