SYMPOSIA PAPER Published: 01 January 1990

Optical Damage on SiO Cavity Mirrors Produced by High-Power VUV Laser Irradiation


We report observation results about damages on SiO2 mirror surfaces. The damages were made when the mirrors were used as a cavity reflector for the Ar and Kr excimer lasers. The surface profile, transmission and reflectance spectra, and X-ray photoelectron spectra show that bulk Si is isolated in the surface layer which was exposed to 9.8eV photons from the Ar excimer laser. The Kr excimer laser, whose photon energy is 8.5eV, does not induce such a phenomenon. The Ar excimer laser photons, surmounting the fundamental band gap of SiO2, 9eV, are considered to create high density excitons that induce the Si-O bond breaking and Si isolation.

Author Information

Takigawa, Y
Kurosawa, K
Okuda, M
Sasaki, W
Yoshida, K
Fujiwara, E
Kato, Y
Inoue, Y
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Developed by Committee: E13
Pages: 267–277
DOI: 10.1520/STP26496S
ISBN-EB: 978-0-8031-5157-4
ISBN-13: 978-0-8031-4478-1