SYMPOSIA PAPER Published: 01 January 1989
STP26055S

Optimum Polysilicon Deposition on Wafer Backs for Gettering Purposes

Source

Polysilicon deposition process parameters have been addressed for the preparation of poly layers having characteristics that increase extrinsic gettering behaviour, irrespective of oxygen enhanced precipitation, thus making them particularly suitable for relatively high device processing temperatures.

Morphological parameters that correlate with extrinsic gettering efficiency have been found to be grain sizes and their preferred orientation, so care was given to produce and consistently reproduce such characteristics by a suitable choice of the deposition process parameters.

Author Information

Borionetti, G
Domenici, M
Ferrero, G
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Details
Developed by Committee: F01
Pages: 400–411
DOI: 10.1520/STP26055S
ISBN-EB: 978-0-8031-5107-9
ISBN-13: 978-0-8031-1273-5