SYMPOSIA PAPER Published: 01 January 1989
STP26053S

Effect of Pre- and Post-Epitaxial Annealing on Oxygen Precipitation and Internal Gettering in N/N (100) Epitaxial Wafers

Source

Oxygen precipitation in silicon heavily-doped with antimony, particularly at the concentration range higher than 7×1017 atoms/cm3, is known to be severely suppressed because of the doping concentration effect. This results in a reduction in internal gettering (IG) efficiency in the N/N+ epitaxial wafers. In this work, substrate wafers heavily-doped with antimony were pre-annealed prior to the epitaxial deposition process. Post-epitaxial annealing was used for enhancing precipitation in asdeposited epitaxial wafers. The results indicate that both pre- and post-epitaxial annealing can improve oxygen precipitation and IG efficiency. The relationship between oxide breakdown, generation lifetime and bulk defect density is observed.

Author Information

Wijaranakula, W
Shimada, S
Mollenkopf, H
Matlock, JH
Stuber, M
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Details
Developed by Committee: F01
Pages: 371–386
DOI: 10.1520/STP26053S
ISBN-EB: 978-0-8031-5107-9
ISBN-13: 978-0-8031-1273-5