SYMPOSIA PAPER Published: 01 January 1989
STP26048S

Chemical Analysis of Metallic Impurity on the Surface of Silicon Wafers

Source

In silicon wafer processing, it is important to decrease the impurity on the wafer after final process. The authors report a method of analysis of impurity only on the top surface of Si wafers. In this study, wafer are contaminated with a cleaning solution containing impurity, and the impurity remains on the wafer is collected into the resulting liquid of the oxide and HF vapor. They are then analysed by atomic absorption spectrophotometer. Detection limits are Na: 5×108atoms/cm2, Fe: 2×109atoms/cm2, Al: 1×1010atoms/cm2.

Author Information

Shiraiwa, T
Fujino, N
Sumita, S
Tanizoe, Y
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Details
Developed by Committee: F01
Pages: 314–323
DOI: 10.1520/STP26048S
ISBN-EB: 978-0-8031-5107-9
ISBN-13: 978-0-8031-1273-5