SYMPOSIA PAPER Published: 01 January 1989
STP26047S

Application of Total Reflection X-Ray Fluorescence Analysis for Metallic Trace Impurities on Silicon Wafer Surfaces

Source

Total Reflection X-Ray Fluorescence Analysis (TXRF) is presented as a new analytical tool which allows to assess the metal contamination on silicon wafer surfaces in a non-destructive way. The technique uses a conventional X-Ray tube with a Mo anode, an energy-dispersive Si(Li) spectrometer, and an alignment set-up for the exact control of the angle of incidence which is kept below the critical angle for total reflection. Detection limits in the order of 100 ppm of a monoatomic layer are achieved e.g. for transistion metals. Application studies include plating of metals from a high purity liquid process chemical (BHF) and the adsorptivity of the silicon surface for Br originating from RCA type cleaning procedures.

Author Information

Eichinger, P
Rath, HJ
Schwenke, H
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Details
Developed by Committee: F01
Pages: 305–313
DOI: 10.1520/STP26047S
ISBN-EB: 978-0-8031-5107-9
ISBN-13: 978-0-8031-1273-5