SYMPOSIA PAPER Published: 01 January 1989
STP26028S

Softening of Si and GaAs During Thermal Process

Source

Semiconductor materials for highly integrated circuit devices need the resistance for the slippage during thermal process to prevent the defect induced degradation. Temperature dependence of strength of cz-Si and pcz-GaAs was investigated by micro-Vickers hardness tester. Hardness of cz-Si wafers lowers sharply with testing temperature and with precipitated oxygen content. Hardness of pcz-GaAs wafers starts to decrease at a temperature about 400°C lower than is the case for Si wafers. Dopant content dependence of hardness between 600 and 700°C was not observed in Si doped or Zn doped pcz-GaAs wafers.

Author Information

Suga, H
Ichizawa, M
Endo, K
Tomizawa, K
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Details
Developed by Committee: F01
Pages: 43–53
DOI: 10.1520/STP26028S
ISBN-EB: 978-0-8031-5107-9
ISBN-13: 978-0-8031-1273-5