SYMPOSIA PAPER Published: 01 January 1989
STP26027S

Characterization of High Growth Rate Epitaxial Silicon from a New Single Wafer Reactor

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A new single wafer epitaxial silicon reactor, the Epsilon One, is characterized by automated cassette-to-cassette wafer handling, rapid thermal cycle, and high deposition rate for wafers up to 150 mm diameter. This paper describes the reactor, and its results in terms of epi thickness and doping uniformity, epi/substrate transition width, and epi defect density.

Author Information

Robinson, MD
Lawrence, LH
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Details
Developed by Committee: F01
Pages: 30–42
DOI: 10.1520/STP26027S
ISBN-EB: 978-0-8031-5107-9
ISBN-13: 978-0-8031-1273-5