SYMPOSIA PAPER Published: 01 January 1987

Applications of x-ray Fluorescence Analysis to the Thin Layer on Silicon Wafers


Thin layered materials on silicon wafer were analyzed with X-ray fluorescent spectrometer which is specially designed for the analysis of semiconductor devices. The spectrochemical analysis using hard X-rays (22Ti - 92U) can be applied to the thicker layered materials (0.5 – 50µm). By soft and ultrasoft X-rays (5B - 21Sc), thinner layered materials (0 – 2µm) can be analyzed for the determination of concentration of layered material and film thickeness. In analysis of SiO2 Layer, the intensity of O-Kα X-ray was measured and the thickness was calculated by the theoretical approach. The precision of measurement is a few percent and it can distinguish the difference of natural oxide according to the cleaning method. Other experimental results of typical silicon wafer samples are informed; which are the analysis of NSG, PSG, BPSG, metal and alloy films, and As or P implanted elements.

Author Information

Shiraiwa, T
Ochiai, T
Sano, M
Tada, Y
Arai, T
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Developed by Committee: F01
Pages: 615–627
DOI: 10.1520/STP25796S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4