SYMPOSIA PAPER Published: 01 January 1987

Analysis of Boron Profiles As Determined by Secondary Ion Mass Spectrometry, Spreading Resistance, and Process Modeling


A controlled experiment was performed for a comparative investigation of dopant profiles by secondary ion mass spectrometry (SIMS), spreading resistance (SR), and process modeling. Boron profiles of varying junction depth were considered. These profiles were generated by boron ion implantation in n-type silicon and by varying the subsequent drive-in times. There has been emphasis on the quantification of the day-to-day repeatability of both SIMS and SR techniques and their comparison to process modeling. SUPREM III process simulator was used to generate the modeling profiles. Statistical regression analysis techniques were utilized to characterize the measured dopant profiles. Although there are distinct differences between the profiles determined by SIMS, SR, and Process Modeling, some consistent relationships, as for junction depth, are shown.

Author Information

Banke, GW
Varahramyan, K
Slusser, GJ
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Developed by Committee: F01
Pages: 573–585
DOI: 10.1520/STP25790S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4