SYMPOSIA PAPER Published: 01 January 1987

A Comparative Study of Carrier Concentration Profiling Techniques in Silicon: Spreading Resistance and Electrochemical CV


The need to be able to measure carrier concentration profiles in silicon has led to the improvements in well known techniques e.g. spreading resistance (SR) and the development of new techniques e.g. electrochemical CV profiling (ECV). Both of these techniques have demonstrated features such as depth resolution, sensitivity and dynamic range but each show some limitations and problems in practical implementation. This paper demonstrates the use of both techniques on a number of samples, in particular silicon grown by MBE showing rapid dopant transitions. The profiles obtained by both techniques are compared and reasons for differences are discussed.

It is concluded that both techniques offer certain advantages in carrier concentration profiling e.g. dynamic range with SR and speed of data acquisition with ECV but both have limitations e.g. the need for correction factors with SR and limited dynamic range in ECV. As a consequence, both techniques should be viewed as being complementary and not competing.

Author Information

Pawlik, M
Groves, RD
Kubiak, RA
Leong, WY
Parker, EHC
Price: $25.00
Contact Sales
Reprints and Permissions
Reprints and copyright permissions can be requested through the
Copyright Clearance Center
Developed by Committee: F01
Pages: 558–572
DOI: 10.1520/STP25788S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4