SYMPOSIA PAPER Published: 01 January 1987

Nature of Process-Induced Si-SiO Defects and Their Interaction with Illumination


Transparent gate structures were fabricated by electron beam evaporation of Sn-doped In2O3 on oxidized p-Si substrates. The samples were oxidized at 1100°C in dry oxygen. No post-oxidation or post-electrode-deposition annealig was carried out. Admittance-voltage-frequency measurements were made under optical illumination. Interface state density distributions and hole and electron capture cross-sections were obtained using the recently developed optical metal-oxide-semiconductor (MOS) admittance technique. The experimental interface state density profile contained two peaked distributions, one near the valence band-edge Ev, and the other near the conduction band-edge Ec, overlying a concave background. The peak near Ec was sharper and the peak density was higher than in the case of the peak near Ev. The capture cross-section vs band-gap energy profile also displayed a peaked distribution for interface states under each of the peaks. With increasing illumination, the state density at the peak increased, the peak energy location moved closer to the respective band-edge, and the capture cross-section decreased. The experimental results show the presence of defects at unpassivated Si-SiO2 interfaces, which exchange electrons/holes with silicon bands under illumination.

Author Information

Kar, S
Tewari, M
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Developed by Committee: F01
Pages: 381–392
DOI: 10.1520/STP25777S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4