SYMPOSIA PAPER Published: 01 January 1987

High Reliability Infrared Measurements of Oxygen and Carbon in Silicon


High reliability infrared measurements of oxygen and carbon in silicon single crystals are presented. One is the preparation and distribution of standard sample sets with known oxygen contents. Oxygen content range is 5 to 11×1017 atoms/cm3 and the accuracy is estimated to be within 4×1016 atoms/cm3. The other is the establishment of a standard infrared measurement procedure for carbon performed by round robin infrared measurement and charged particle activation analysis. From the procedure the conversion coefficient is determined to be (8.5±0.9)×1016 atoms·cm−3/cm−1.

Author Information

Inoue, N
Arai, T
Nozaki, T
Endo, K
Mizuma, K
Price: $25.00
Contact Sales
Reprints and Permissions
Reprints and copyright permissions can be requested through the
Copyright Clearance Center
Developed by Committee: F01
Pages: 365–377
DOI: 10.1520/STP25776S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4