SYMPOSIA PAPER Published: 01 January 1987

Free Carrier Absorption and Interstitial Oxygen Measurements


The infrared (IR) absorption of n- and p-type silicon samples was measured over the concentration range ∼1015 to 6×1017 atoms/-cm−3. The free carrier absorption exhibited a power-law dependence on wavenumber. The data were fit to a logarithmic function with this dependence, and these results were applied to the determination of the baseline from which to compute the corrected net IR absorption at 1107 cm−1 due to interstitial oxygen. Application of this correction for the free carrier absorption results in an improvement of 3% to 30% in the accuracy of the oxygen content determination at dopant concentrations above 1016 atoms/cm3.

Author Information

Gladden, WK
Baghdadi, A
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Developed by Committee: F01
Pages: 353–364
DOI: 10.1520/STP25775S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4