SYMPOSIA PAPER Published: 01 January 1987

Effect of Bulk Defects in Silicon on SiO Film Breakdown


The origins of degrading the dielectric breakdown strength of silicon dioxide on silicon were analysed by controlling surface and bulk lattice defects and back side damage. As a result, two different mode of breakdown were observed. One is caused by lattice defects emerging on the silicon/silicon dioxide interface, but the degree of degradation in breakdown strength was only as much as 1 MV/cm. The other is due to low density of point like contamination. This kind of contamination was controlled with the gettering by lattice defects nearby the surface region.

Author Information

Suga, H
Murai, K
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Developed by Committee: F01
Pages: 336–352
DOI: 10.1520/STP25772S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4