SYMPOSIA PAPER Published: 01 January 1987

Characterization of Silicon Surface Defects by the Laser Scanning Technique


The increase of circuit complexity in an IC chip has greatly increased the cost of processed wafers. The cost can be reduced if the defective wafers which cause the poor process yields can be screened prior to the wafer processing. Recent advanced in laser optics and data processing have made automatic laser scanners available. The laser scanners can be potentially used for 100% of the screening of incoming wafers and as a process control tool for certain steps of wafer processing. This paper reports (1) the correlation of defects detected by the laser scanner with the physical nature of defects, (2) utilization of the laser scanner for the characterization of process-induced defects, and (3) utilization of the laser scanner for monitoring substrate cleaning and epitaxial growth processes.

Author Information

Liaw, HM
Rose, JW
Nguyen, HT
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Developed by Committee: F01
Pages: 281–296
DOI: 10.1520/STP25762S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4