SYMPOSIA PAPER Published: 01 January 1987

Quality Control and Optimization During Plasma Deposition of a-Si:H


It is shown that contactless time-resolved microwave conductivity (TRMC) measurements permit an in-process quality control during the plasma deposition of amorphous hydrogenated silicon (a-Si:H) films. The relation between the transient photoconductivity of the amorphous semiconductor and its quality is discussed. The influence of various parameters, such as the substrate temperature and chemical composition on the shape of the signals is explained in terms of charge carrier kinetics. An automated production process to yield quality films is presented to demonstrate the use of these measurements.

Author Information

Kunst, M
Werner, A
Beck, G
Kuppers, U
Tributsch, H
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Developed by Committee: F01
Pages: 241–249
DOI: 10.1520/STP25754S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4