SYMPOSIA PAPER Published: 01 January 1987
STP25748S

The Electrical Properties of MOS Transistors Fabricated with Direct Ion Beam Nitridation

Source

Direct ion beam nitridation was used to form a thin masking layer in the field oxide growth step. The resulting field oxide encroachment per device edge was reduced from 1.0 µm found in LOCOS devices to 0.33 µm. However, the transistors fabricated with the ion beam nitridation step displayed poor device characteristics. We found that with the growth of 50 nm of sacrificial oxide at 950°C and then subsequent removal of the oxide before the gate oxide growth, the adverse side effects, such as; low electron field effect mobility, high junction leakage current and low gate oxide breakdown strength can be drastically improved.

Author Information

Lee, H-S
Price: $25.00
Contact Sales
Related
Reprints and Permissions
Reprints and copyright permissions can be requested through the
Copyright Clearance Center
Details
Developed by Committee: F01
Pages: 150–159
DOI: 10.1520/STP25748S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4