SYMPOSIA PAPER Published: 01 January 1987

Effect of a Shallow Xenon Implantation on a Profile Measured by Spreading Resistance


Shallow xenon ion implantations were performed into silicon wafers previously doped by BF2+ implantation and subsequent annealing. The major extended changes in the spreading resistance profile of the P-type doping, arising from the shallow xenon implantations, are presented here. A possible explanation of this effect on the electrical profile, based on “carrier spilling” described and analyzed by S.M. Hu (5) is presented.

Author Information

Lora-Tamayo, E
Du Port de Pontcharra, J
Bruel, M
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Developed by Committee: F01
Pages: 108–118
DOI: 10.1520/STP25744S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4