SYMPOSIA PAPER Published: 01 January 1987

Characterization of the in Situ HCl Etch for Epitaxial Silicon


An experimental design strategy was used to characterize the in situ HCl etch used in the epitaxial silicon deposition and the selective epitaxial silicon processes. The dependence of the etch rate, haze and etch anisotropy is determined as a function of the HCl flow and etch temperature. Results show that temperatures less than 1025°C are the only limitation for the in situ HCl etch used in the epitaxial silicon process. Patterned oxide substrates which are used in a selective epi process show different etch rate and haze characteristics than unpatterned substrates. Etch anisotropy on the oxide patterned substrates limits the operational region for the selective epi process.

Author Information

Medernach, JW
Wells, VA
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Developed by Committee: F01
Pages: 79–92
DOI: 10.1520/STP25742S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4