SYMPOSIA PAPER Published: 01 January 1987

Silicon Epitaxial Growth on N+ Substrate for CMOS Products


An N-type epitaxial layers were grown over low resisitivity N-type substrate with and without pre-epi internal gettering (IG) cycle. Epitaxy was grown using either Silicon tetrachloride (SIL) or Silicon dichloride (DCS) at 1200° and 1100°C respectively. The epitaxial structures were characterized for as-grown microdefects and electrical characteristics (minority carrier lifetimes, breakdown voltage and C-t holdtime). The results indicate that epitaxial layers grown at a low growth rate and high temperature produced a minimum density of microdefects. These defects may further be reduced during subsequent thermal cycles especially with pre-epi IG-cycle. Consequently, electrical characteristics of epi layer were also improved.

Author Information

Swaroop, RB
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Developed by Committee: F01
Pages: 65–78
DOI: 10.1520/STP25741S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4