SYMPOSIA PAPER Published: 01 January 1987

Thin Silicon Epitaxial Films Deposited at Low Temperatures


Specular epitaxial silicon layers have been successfully deposited on 3-inch wafers at 825°C using an atmospheric pressure chemical vapor deposition process. No plasma or high temperature etching is involved in this process. Predeposition cleaning of the substrate surface is the key to achieve epitaxial growth at this low temperature. Quantitative characterization of the low-temperature epitaxy quality has been performed by X-ray diffraction, UV reflectance, Hall mobility measurement, and diode breakdown measurement. All test results demonstrated that an epitaxy comparable to that of high temperature epitaxy has been achieved. This low temperature epitaxy process greatly reduces the out-diffusion and autodoping, thus leading to significant improvement in device dimension control.

Author Information

Chang, H-R
Rosczak, JS
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Developed by Committee: F01
Pages: 24–32
DOI: 10.1520/STP25738S
ISBN-EB: 978-0-8031-5021-8
ISBN-13: 978-0-8031-0459-4