SYMPOSIA PAPER Published: 01 January 1988
STP24461S

New Data Regarding the Thermal Laser-Damage Model and the Accumulation Phenomena in Silicon

Source

In this paper we propose a new statistical framework from which to view laser-induced damage in silicon, particularly N-on-1 damage effects such as accumulation. To select between possible models for damage, we obtained a refined data set for the statistics of nanosecond pulsed Nd:YAG laser damage to Si surfaces. The implications of this data for modeling laser damage experiments will be discussed.

Author Information

Fry, SP
Walser, RM
Becker, MF
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Details
Developed by Committee: F01
Pages: 492–500
DOI: 10.1520/STP24461S
ISBN-EB: 978-0-8031-5033-1
ISBN-13: 978-0-8031-4481-1