SYMPOSIA PAPER Published: 01 January 1988

Thermal Conductivity of Dielectric Films and Correlation to Damage Threshold at 1064nm


An infrared line scanning technique has been used to measure thermal conductivities of TiO2, Ta2O5, ZrO2, HfO2, A12O3 and SiO2 layers. Damage thresholds are determined using a two stage Nd:Yag laser with pulse length of 14ns and spot size of 300μ. A correlation between thermal conductivity, absorption coefficient, melting point and damage threshold is established. To explain the relation, theoretical models based on absorption and inclusion breakdown are analysed.

Author Information

Akhtar, SMJ
CSSP, Punjab University, Lahore, Pakistan
Ristau, D
Ebert, J
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Developed by Committee: E13
Pages: 345–351
DOI: 10.1520/STP18574S
ISBN-EB: 978-0-8031-5032-4
ISBN-13: 978-0-8031-4477-4