SYMPOSIA PAPER Published: 01 January 1988

A Study of Thin Film Growth in the ZrO - SiO System


X-ray diffraction and transmission electron microscopy have been used to examine the microstructures of thin films of pure ZrO2 - SiO2 films formed by e-beam coevaporation. The results suggest that films composed of 100% ZrO2 grow by the formation of tapered polycrystalline columns. Near the substrate the columns are small in diameter and consist of a single crystalline phase, but at increasing distances from the substrate the column diameters increase and material with two polycrystalline phases appears. At a given distance from the substrate, small additions of SiO2 to the film composition result in a smaller column diameter. Films with 25 mole% SiO2 show an amorphous electron diffraction pattern, a result consistent with previously observed x-ray diffraction patterns. The surfaces of the amorphous films appear nearly featureless and are significantly smoother than the surfaces of the pure ZrO2 films.

Author Information

Farabaugh, EN
Sun, YN
Langhou Institute of Physics, Langhou, People's Republic of China
Sun, J
Shanghai Institute of Ceramics, Shanghai, People's Republic of China
Feldman, A
Chen, H-H
Precision Instrument Development Center, Hsinchu, Taiwan
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Developed by Committee: F01
Pages: 321–331
DOI: 10.1520/STP18570S
ISBN-EB: 978-0-8031-5032-4
ISBN-13: 978-0-8031-4477-4