SYMPOSIA PAPER Published: 01 January 1992

The Effect of Crystal Orientation on Damage Accumulation in Chromium-Implanted Al O


Chromium-implantation of single crystal aluminum oxide (Al2O3) has been shown to be anisotropic with respect to damage accumulation. Ultra-low load indentation and Rutherford backscattering spectroscopy (RBS) have been used to demonstrate the dependence of radiation damage on fluence and crystal orientation. Single crystal Al2O3) specimens of c-axis ([0001] normal to the surface) and a-axis ([1120] normal to the surface) orientations were ion-implanted simultaneously at room temperature with chromium ions of 160-keV energy to flu-ences up to 6 × 1017 ions cm~2. The implanted specimens were found to possess different near-surface mechanical properties. Subsequent RBS-ion channeling examination indicated different amounts of disorder in both the aluminum and oxygen sublattices for the two orientations. These results imply a higher amorphization threshold in terms of implantation fluence for the a-axis oriented samples.

Author Information

O'Hern, ME
Nano Instruments, Inc., Knoxville, TN
Romana, LJ
Oak Ridge Associated Universities, assigned to Oak Ridge National Laboratory, Oak Ridge, TN
McHargue, CJ
Oak Ridge National Laboratory, Oak Ridge, TN
McCallum, JC
University of Western Ontario, Oak Ridge, TN, Canada
White, CW
Oak Ridge National Laboratory, Oak Ridge, TN
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Developed by Committee: E10
Pages: 740–748
DOI: 10.1520/STP17907S
ISBN-EB: 978-0-8031-5187-1
ISBN-13: 978-0-8031-1477-7