SYMPOSIA PAPER Published: 01 January 1992
STP17897S

Auto-Oscillation Process in Impure Crystals under Irradiation

Source

A theoretical approach for the auto-oscillation of radiation-induced defect density and temperature in impure crystals is developed. It is shown that at certain critical parameters of crystal properties and irradiation conditions, the steady distribution of temperature and the defect density of irradiated crystal become unstable and auto-oscillation must be observed. These oscillations are treated as the result of crystal heating due to the energy release in the processes of radiation-defect recombination and their absorption by sinks. Critical parameters and auto-oscillation frequencies have been determined. The calculations for some materials are presented.

Author Information

Selishchev, PA
Institute for Nuclear Research Academy of Sciences of the Ukrainian SSR, Kiev, USSR
Sugakov, VI
Institute for Nuclear Research Academy of Sciences of the Ukrainian SSR, Kiev, USSR
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Details
Developed by Committee: E10
Pages: 594–599
DOI: 10.1520/STP17897S
ISBN-EB: 978-0-8031-5187-1
ISBN-13: 978-0-8031-1477-7