SYMPOSIA PAPER Published: 14 December 2018
STP160820170042

Design and Response Testing of Boron-Diffused Silicon Carbide Neutron Detectors for Dosimetry and Monitoring Applications

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A high-sensitivity boron-diffused silicon carbide (4H-SiC) p-n diode has been designed and fabricated using vapor-phase epitaxy. Boron-10 (10B) is diffused into nitrogen-doped n SiC, forming the p+ layer, and thermal neutrons are detected through the ionization produced in the detector by 10B(n,α)7Li reactions. These detectors have been tested with thermalized neutrons from an isotopic californium-252 (252Cf) source and have been shown to provide a robust pulse-height spectrum, which is easily separable from the anticipated gamma-ray response. The detectors are expected to be useful for neutron and gamma-ray fluence rate measurements in high gamma-ray fields for extended times at temperatures up to 700°C.

Author Information

Mandal, Krishna
Dept. of Electrical Engineering, University of South Carolina, Columbia, SC, US
Chowdhury, Towhid
Dept. of Electrical Engineering, University of South Carolina, Columbia, SC, US
Oner, Cihan
Dept. of Electrical Engineering, University of South Carolina, Columbia, SC, US
Ruddy, Frank
Ruddy Consulting, SC, US
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Details
Developed by Committee: E10
Pages: 353–360
DOI: 10.1520/STP160820170042
ISBN-EB: 978-0-8031-7662-1
ISBN-13: 978-0-8031-7661-4