SYMPOSIA PAPER Published: 01 January 1998

Oxygen Precipitation Characterization Using the Elymat Technique


In processed wafers the depth of the precipitate-free zone and the density of bulk microdefects are of great importance. In this case the constant diffusion length is no longer valid. A two region model (defect-free / precipitated region) was assumed with two different diffusion lengths LD in a depth t. Solving the set of differential equations a three-dimensional picture of denuded zone depth and diffusion length in the precipitated bulk of the wafer is obtained. Investigating precipitated wafers using the Electrolytical Metal Tracer technique a correlation between the bulk microdefects and the measured minority carrier diffusion length was found. An empirical expression was determined to estimate Bulk Micro Defect density in the range from 8 × 104 to 2 × 107 cm−2. This means for practical application to receive more information on the oxygen precipitation behavio r of the whole wafer using an improved Electrolytical Metal Tracer technique.

Author Information

Obermeier, G
Wacker Siltronic, Application, Burghausen, Germany
Hage, J
Wacker Siltronic, Application, Burghausen, Germany
Huber, D
Wacker Siltronic, Application, Burghausen, Germany
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Developed by Committee: F01
Pages: 305–317
DOI: 10.1520/STP15714S
ISBN-EB: 978-0-8031-5389-9
ISBN-13: 978-0-8031-2489-9