SYMPOSIA PAPER Published: 01 January 1998
STP15705S

Application and Comparison of SPV and μPCD for Iron Measurement in Silicon Wafer Manufacturing

Source

Minority carrier lifetime tools μ-PCD and SPV diffusion length are used in process monitoring in silicon wafer manufacturing for metal contamination control. In p-type silicon, both lifetime tools had been correlated with DLTS so as to be able to measure [Fe] concentration. In comparison of these two methods, a good correlation was obtained in a large range with extrapolation to the upper 1e10/cm3 level using Czochralski (CZ) silicon samples. In general, SPV resulted in a higher [Fe] than μ-PCD methods. At lower 1e10/cm3 level, the boron and oxygen concentrations significantly limit the [Fe] detection capability of μ-PCD, but less significantly on that of SPV.

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Pan, Y
SEH America, Inc., Vancouver, WA, USA
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Details
Developed by Committee: F01
Pages: 199–205
DOI: 10.1520/STP15705S
ISBN-EB: 978-0-8031-5389-9
ISBN-13: 978-0-8031-2489-9