SYMPOSIA PAPER Published: 01 January 2000

Ultra-Thin Film Dielectric Reliability Characterization


The reliability of gate oxides is becoming a critical concern as oxide thickness is scaled below 4 nm in future technology. The breakdown detection algorithms in traditional reliability characterization techniques must be modified for sub-4 nm thick SiO2 films that exhibit excessive tunneling currents and soft breakdown. It becomes essential to fully understand the physical mechanism(s) responsible for gate oxide wear-out and breakdown if reliability projections are based on the results of highly accelerated wafer-level GOI tests. Issues relating to the reliability testing of ultra-thin oxides are discussed with examples.

Author Information

Suehle, JS
National Institute of Standards and Technology, Gaithersburg, MD
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Developed by Committee: F01
Pages: 27–40
DOI: 10.1520/STP13481S
ISBN-EB: 978-0-8031-5431-5
ISBN-13: 978-0-8031-2615-2